Samsung MV-3V2G4D/US 4 GB (2 x 2 GB) DDR3-1333 CL9 Memory
Samsung MV-3V2G4D/US 4 GB (2 x 2 GB) DDR3-1333 CL9 Memory
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Specifications
ManufacturerSamsung
Part #MV-3V2G4D/US
SpeedDDR3-1333
Form Factor240-pin DIMM (DDR3)
Modules2 x 2GB
ColorBlack
First Word Latency13.503 ns
CAS Latency9
Voltage1.5 V
ECC / RegisteredNon-ECC / Unbuffered
Heat SpreaderNo